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AOB4184

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AOB4184

MOSFET N-CH 40V 12A/50A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOB4184. This device features a 40V drain-source voltage (Vdss) and supports continuous drain current of 12A at ambient temperature (Ta) and 50A at case temperature (Tc). It offers a low on-resistance (Rds On) of 10mOhm maximum at 20A and 10V Vgs. The AOB4184 is designed for efficient power management with a maximum power dissipation of 2.5W (Ta) and 50W (Tc). Key electrical characteristics include a gate charge (Qg) of 35 nC maximum at 10V Vgs and input capacitance (Ciss) of 1800 pF maximum at 20V Vds. The MOSFET is housed in a TO-263-3, D2PAK package suitable for surface mounting and operates across a temperature range of -55°C to 175°C. This component finds application in power supply circuits and automotive systems. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 20 V

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