AOB416
MOSFET N-CH 100V 6.2A/45A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB416 is an N-Channel Power MOSFET from the SDMOS™ series. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6.2A at 25°C (ambient) and 45A at 25°C (case). The AOB416 offers a maximum on-resistance (Rds On) of 36mOhm at 20A and 10V gate-source voltage. Power dissipation is rated at 2.5W (ambient) and 150W (case). The component is housed in a TO-263 (D2PAK) surface mount package and operates within a temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 24nC at 10V and an input capacitance (Ciss) of 1450pF at 50V. This MOSFET is utilized in applications such as power management and motor control across various industrial sectors.
Additional Information
Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 50 V |
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