AOB414
MOSFET N-CH 100V 6.6A/51A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB414 is an N-Channel Power MOSFET from the SDMOS™ series. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) rating of 6.6A at 25°C ambient and 51A at 25°C case temperature. The maximum power dissipation is 2.5W (Ta) and 150W (Tc). With a low on-resistance (Rds On) of 25mOhm at 20A and 10V, this MOSFET is designed for efficient power switching applications. Key parameters include a gate charge (Qg) of 34 nC at 10V and an input capacitance (Ciss) of 2200 pF @ 50V. The AOB414 is housed in a TO-263-3, D2PAK surface mount package. Typical applications include power management, automotive systems, and industrial power supplies. It supports gate drive voltages up to ±25V, with a threshold voltage (Vgs(th)) of 4V @ 250µA.
Additional Information
Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta), 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 50 V |
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