AOB412L
MOSFET N-CH 100V 8.2A/60A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB412L is an N-Channel Power MOSFET from the SDMOS™ series. This device features a 100 V drain-source voltage and a continuous drain current capability of 8.2 A at ambient temperature and 60 A at case temperature. Its low on-resistance is specified as 15.5 mOhm maximum at 20 A and 10 V gate-source voltage. The MOSFET is housed in a TO-263-3, D2PAK package for surface mounting, with a maximum power dissipation of 2.6 W at ambient and 150 W at case temperature. Key parameters include a gate charge of 54 nC at 10 V and an input capacitance of 3220 pF at 50 V. It operates across a temperature range of -55°C to 175°C. This component is suitable for applications in power management and industrial systems.
Additional Information
Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
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