AOB411L
MOSFET P-CH 60V 8A/78A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOB411L, a P-Channel Power MOSFET designed for demanding applications. This TO-263 (D2PAK) package device features a drain-source voltage (Vdss) of 60V and offers a continuous drain current of 8A at 25°C ambient and 78A at 25°C case temperature. The AOB411L exhibits a maximum on-resistance (Rds On) of 16.5mOhm at 20A and 10V gate drive. Key characteristics include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 6400 pF at 30V. With a maximum power dissipation of 2.1W (ambient) and 187W (case), this MOSFET operates across a temperature range of -55°C to 175°C. It is commonly employed in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 187W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 30 V |
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