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AOB409L

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AOB409L

MOSFET P-CH 60V 5A/31.5A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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The Alpha & Omega Semiconductor Inc. AOB409L is a P-channel, 60V MOSFET designed for power management applications. This component offers a continuous drain current of 5A at 25°C ambient (Ta) and 31.5A at 25°C case (Tc), with a maximum power dissipation of 2.1W (Ta) and 83.3W (Tc). It features a low on-resistance of 38mOhm maximum at 20A and 10V. The AOB409L is housed in a TO-263 (D2PAK) surface-mount package, suitable for high-density board designs. Key electrical characteristics include a gate charge of 52 nC maximum at 10V and input capacitance of 2953 pF maximum at 30V. It operates within a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power control, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta), 31.5A (Tc)
Rds On (Max) @ Id, Vgs38mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2953 pF @ 30 V

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