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AOB29S50L

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AOB29S50L

MOSFET N-CH 500V 29A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOB29S50L, offers a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 29A at 25°C (Tc). This MOSFET features a maximum on-resistance (Rds On) of 150mOhm at 14.5A and 10V Vgs, with a gate charge (Qg) of 26.6 nC at 10V. The device has a high power dissipation capability of 357W (Tc) and an input capacitance (Ciss) of 1312 pF at 100V. The AOB29S50L is housed in a TO-263-3, D2PAK surface mount package, suitable for applications within power supply, lighting, and motor control industries. Operating temperature ranges from -55°C to 150°C.

Additional Information

Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 14.5A, 10V
FET Feature-
Power Dissipation (Max)357W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1312 pF @ 100 V

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