AOB298L
MOSFET N-CH 100V 9A/58A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOB298L, offers a 100V drain-source breakdown voltage. This TO-263 packaged device features a low on-resistance of 14.5mOhm at 20A and 10V Vgs. Continuous drain current is rated at 9A (Ta) and 58A (Tc), with maximum power dissipation of 2.1W (Ta) and 100W (Tc). Key parameters include a 27 nC gate charge and 1670 pF input capacitance at 50V. The AOB298L is suitable for applications in industrial and automotive sectors requiring efficient power switching. It operates within a temperature range of -55°C to 175°C (TJ) and is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 50 V |
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