AOB296L
MOSFET N CH 100V 9.5A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOB296L, is a surface-mount device in a TO-263 (D2PAK) package. This MOSFET features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 70A (Tc) at 25°C, with a pulsed drain current capability. The device exhibits a maximum On-Resistance (Rds On) of 9.7mOhm at 20A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 2785 pF at 50V. Power dissipation is rated at 107W (Tc). This component is suitable for applications in power conversion, industrial motor control, and automotive systems. It operates within a junction temperature range of -55°C to 175°C. The device is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2785 pF @ 50 V |
Request a Quote
Clients Also Buy
AONS520A70
N
AONV110A60
N
AOK065A60FD
LINEAR IC
