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AOB292L

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AOB292L

MOSFET N-CH 100V 105A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOB292L, features a 100V drain-source voltage and a continuous drain current of 105A at 25°C case temperature. This surface mount TO-263 (D2PAK) device offers a low on-resistance of 4.1mOhm maximum at 20A and 10V gate-source voltage. Key parameters include a gate charge of 126 nC maximum at 10V and input capacitance of 6775 pF maximum at 50V. Power dissipation is rated at 300W at 25°C case temperature. Operating temperature range is -55°C to 175°C. This component is suitable for applications in power supplies, automotive, and industrial motor control. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6775 pF @ 50 V

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