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AOB2918L

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AOB2918L

MOSFET N-CH 100V 13A/90A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOB2918L is a 100V N-Channel MOSFET, housed in a TO-263 (D2PAK) surface-mount package. This component offers a continuous drain current of 13A at 25°C ambient temperature and up to 90A at 25°C case temperature. Its low on-resistance is specified at 7mOhm maximum at 20A and 10V gate drive. Key electrical characteristics include a gate charge of 53nC maximum at 10V and input capacitance of 3430pF maximum at 50V. The device features a high maximum junction temperature of 175°C and a maximum gate-source voltage of ±20V. Power dissipation is rated at 2.1W ambient and 267W under case conditions. This MOSFET is suitable for applications in power conversion, industrial motor control, and automotive systems where high current handling and efficient switching are critical. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3430 pF @ 50 V

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