AOB2910L
MOSFET N CH 100V 6A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOB2910L, is designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6A at 25°C ambient, scaling to 30A at 25°C case temperature. With a maximum on-resistance (Rds On) of 23.5mOhm at 20A and 10V gate drive, it offers low conduction losses. The MOSFET is housed in a TO-263 (D2PAK) surface-mount package, enabling high-density board designs. Key parameters include a gate charge (Qg) of 25 nC maximum and input capacitance (Ciss) of 1190 pF maximum at 50V drain-source voltage. It operates reliably across a wide temperature range from -55°C to 175°C. This component is commonly utilized in power supply units, motor control, and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 50 V |
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