AOB286L
MOSFET N-CH 80V 13A/70A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB286L is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 80V and offers a continuous drain current capability of 13A at ambient temperature and 70A at case temperature. The device exhibits a low on-resistance (Rds On) of 5.7 mOhm at 20A and 10V. Key electrical parameters include a maximum gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3142 pF at 40V. The AOB286L is packaged in a TO-263-3, D2PAK surface mount package, facilitating automated assembly. Its robust thermal performance is indicated by a maximum power dissipation of 2.1W (Ta) and 167W (Tc), with an operating junction temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3142 pF @ 40 V |
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