AOB282L
MOSFET N-CH 80V 18.5A/105A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB282L is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 80 V and a continuous drain current (Id) of 18.5 A at ambient temperature and 105 A at case temperature. The on-resistance (Rds On) is a maximum of 3.2 mOhm at 20 A and 10 V gate-source voltage. With a maximum power dissipation of 2.1 W at ambient and 272.5 W at case temperature, the AOB282L is suitable for power conversion and management circuits. Key parameters include a gate charge (Qg) of 178 nC at 10 V and input capacitance (Ciss) of 7765 pF at 40 V. The MOSFET is housed in a TO-263-3, D2PAK package for surface mounting and operates across a junction temperature range of -55°C to 175°C. This component is commonly found in industrial power supplies, automotive electronics, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 272.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7765 pF @ 40 V |
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