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AOB280A60L

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AOB280A60L

MOSFET N-CH 600V 14A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel MOSFET, AOB280A60L, offers 600V drain-to-source voltage and 14A continuous drain current at 25°C. This surface-mount TO-263 (D2PAK) device features a maximum on-resistance of 280mOhm at 7A and 10V gate-source voltage. With a gate charge (Qg) of 23.5 nC and input capacitance (Ciss) of 1350 pF, it provides efficient switching performance. The device can dissipate up to 156W at 25°C (Tc) and operates across a temperature range of -55°C to 150°C. Applications include power factor correction, switch mode power supplies, and industrial motor control. Packaged in Tape & Reel.

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)156W (Tc)
Vgs(th) (Max) @ Id3.6V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 100 V

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