AOB266L
MOSFET N-CH 60V 18A/140A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOB266L is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage and a continuous drain current capability of 18A at 25°C ambient temperature and 140A at case temperature. With a low Rds(on) of 3.2mOhm at 20A and 10V, it minimizes conduction losses. The AOB266L offers robust thermal performance with a maximum power dissipation of 2.1W (Ta) and 268W (Tc). Key parameters include a maximum gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 6800 pF at 30V. The device is packaged in a TO-263-3, D2PAK surface mount package, suitable for high-power switching in industries such as automotive and industrial power control. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 268W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 30 V |
Request a Quote
Clients Also Buy
AONV110A60
N
AOK065A60FD
LINEAR IC
AOSP66406
N
