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AOB262L

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AOB262L

MOSFET N-CH 60V 20A/140A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOB262L is an N-Channel MOSFET designed for demanding applications. This TO-263 (D2PAK) packaged device features a 60V drain-to-source voltage (Vdss) and supports continuous drain currents of 20A (Ta) and 140A (Tc). With a low on-resistance (Rds On) of 2.8mOhm at 20A and 10V, it minimizes conduction losses. The device exhibits a maximum gate charge (Qg) of 115 nC at 10V and an input capacitance (Ciss) of 9800 pF at 30V. Maximum power dissipation is 2.1W (Ta) and 333W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power supply, automotive, and industrial automation sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9800 pF @ 30 V

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