AOB2618L
MOSFET N-CH 60V 7A/23A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. MOSFET N-CH 60V, part number AOB2618L, is a high-performance N-channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and offers a continuous drain current (Id) of 7A at ambient temperature (Ta) and 23A at case temperature (Tc). With a maximum power dissipation of 2.1W (Ta) and 41.5W (Tc), it is suitable for power conversion circuits. The AOB2618L exhibits a low on-resistance (Rds On) of 19mOhm maximum at 20A and 10V, and a gate charge (Qg) of 20 nC maximum at 10V. It is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management. This MOSFET is engineered for reliable operation across an industrial temperature range of -55°C to 175°C. Applications include power supplies, voltage regulators, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 41.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 30 V |
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