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AOB260L

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AOB260L

MOSFET N-CH 60V 20A/140A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel MOSFET, AOB260L, offers a 60V drain-source voltage (Vdss) and a continuous drain current of 20A at 25°C ambient, scaling to 140A at 25°C case temperature. This device features a low on-resistance (Rds On) of 2.2mOhm at 20A and 10V gate drive, with a maximum gate charge of 180 nC at 10V. The input capacitance (Ciss) is 14200 pF at 30V. Packaged in a TO-263 (D2PAK) surface-mount configuration, it supports a maximum power dissipation of 1.9W (ambient) or 330W (case) and operates within a temperature range of -55°C to 175°C. Applications include power management and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs2.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14200 pF @ 30 V

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