AOB25S65L
MOSFET N-CH 650V 25A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOB25S65L. This TO-263 (D2PAK) surface-mount component offers a 650V drain-source voltage (Vdss) and a continuous drain current of 25A at 25°C (Tc). Key parameters include a maximum on-resistance (Rds On) of 190mOhm at 12.5A and 10V, with a gate charge (Qg) of 26.4 nC at 10V. Input capacitance (Ciss) is specified at 1278 pF maximum at 100V. The device supports a maximum power dissipation of 357W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply design, industrial motor control, and electric vehicle charging infrastructure.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1278 pF @ 100 V |
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