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AOB256L

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AOB256L

MOSFET N-CH 150V 3A/19A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOB256L is an N-Channel Power MOSFET designed for efficient power switching applications. This TO-263 (D2PAK) surface mount component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 3A at ambient temperature, increasing to 19A at case temperature. The device exhibits a maximum Rds On of 85mOhm at 10A and 10V, with a gate threshold voltage (Vgs(th)) of 2.8V at 250µA. Key electrical characteristics include a gate charge (Qg) of 22 nC maximum at 10V and input capacitance (Ciss) of 1165 pF maximum at 75V. Power dissipation is rated at 2.1W (Ta) and 83W (Tc). Operating temperature range is -55°C to 175°C. This component finds application in power supplies, motor control, and lighting systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2.8V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1165 pF @ 75 V

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