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AOB2502L

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AOB2502L

MOSFET N-CH 150V 106A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOB2502L is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 106A at 25°C with a maximum power dissipation of 277W (Tc). The on-resistance (Rds On) is a low 10.7mOhm at 20A and 10V gate drive. Key parameters include a gate charge (Qg) of 60 nC maximum at 10V and input capacitance (Ciss) of 3010 pF maximum at 75V. The AOB2502L utilizes a surface mount TO-263-3, D2PAK package and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial power supply, and high-power conversion systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C106A (Tc)
Rds On (Max) @ Id, Vgs10.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)277W (Tc)
Vgs(th) (Max) @ Id5.1V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3010 pF @ 75 V

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