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AOB210L

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AOB210L

MOSFET N-CH 30V 20A/105A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel MOSFET, AOB210L, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C ambient and 105A at 25°C case temperature. This device features a low on-resistance of 2.6 mOhm maximum at 20A and 10V Vgs. The AOB210L is packaged in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 176W at 25°C case temperature. Key electrical characteristics include a gate charge of 58 nC maximum at 10V Vgs and an input capacitance of 4300 pF maximum at 15V Vds. Operating temperature range is -55°C to 175°C. This MOSFET is utilized in applications such as power management and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 15 V

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