AOB20S60L
MOSFET N-CH 600V 20A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series AOB20S60L is a 600V N-Channel power MOSFET designed for high-efficiency applications. This component features a continuous drain current capability of 20A (Tc) and a maximum power dissipation of 266W (Tc), making it suitable for demanding power conversion tasks. With a low on-resistance of 199mOhm at 10A and 10V Vgs, it minimizes conduction losses. The device has a gate charge (Qg) of 19.8 nC at 10V and input capacitance (Ciss) of 1038 pF at 100V. The AOB20S60L is housed in a TO-263-3, D2PAK surface-mount package, facilitating integration into automated assembly processes. Its robust construction and operating temperature range of -55°C to 150°C (TJ) ensure reliability in industrial, automotive, and telecommunications power supply designs.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 266W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1038 pF @ 100 V |
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