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AOB20C60L

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AOB20C60L

MOSFET N-CH 600V 20A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOB20C60L is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 600V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 20A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 250mOhm at 10A and 10V Vgs. With a gate charge (Qg) of 74 nC at 10V and input capacitance (Ciss) of 3440 pF at 100V, it is optimized for efficient switching. The AOB20C60L is packaged in a TO-263-3, D2PAK surface-mount package, enabling high-density board designs. Its 463W maximum power dissipation (Tc) and an operating temperature range of -55°C to 150°C (TJ) make it suitable for use in power supplies, industrial motor control, and lighting applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3440 pF @ 100 V

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