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AOB160A60L

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AOB160A60L

MOSFET N-CH 600V 24A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. aMOS5™ MOSFET, part number AOB160A60L, is an N-Channel device with a Drain-Source Voltage (Vdss) of 600 V. This surface mount component, packaged in a TO-263 (D2PAK), offers a continuous drain current (Id) of 24A at 25°C and a maximum power dissipation of 250W (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 160mOhm at 12A and 10V, and a gate charge (Qg) of 46 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 2340 pF at 100V. The device operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply, industrial, and consumer electronics sectors.

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id3.6V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2340 pF @ 100 V

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