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AOB1606L

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AOB1606L

MOSFET N-CH 60V 12A/178A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOB1606L is a 60V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a low on-resistance of 6mOhm at 20A and 10V Vgs, enabling minimized conduction losses. With a continuous drain current rating of 12A at 25°C ambient and 178A at 25°C case, it supports demanding thermal management. The device offers a maximum power dissipation of 417W (Tc) and 2.1W (Ta), with a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge of 102 nC, input capacitance of 4500 pF, and a threshold voltage of 3.7V. The AOB1606L is packaged in a TO-263 (D2PAK) surface-mount package, suitable for use in power supplies, automotive electronics, and industrial motor control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V

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