AOB15S65L
MOSFET N-CH 650V 15A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc.'s aMOS™ series N-Channel MOSFET, part number AOB15S65L, offers a 650V drain-source voltage rating and a continuous drain current capability of 15A at 25°C. This device features a maximum on-resistance of 290mOhm at 7.5A and 10V Vgs. With a maximum power dissipation of 208W at 25°C, it is suitable for demanding applications. The AOB15S65L utilizes surface-mount TO-263 (D2PAK) packaging, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 17.2 nC at 10V and input capacitance (Ciss) of 841 pF at 100V. This MOSFET is commonly employed in power factor correction, switch mode power supplies, and industrial motor control applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 841 pF @ 100 V |
Request a Quote
Clients Also Buy
AOB27S60L
MOSFET N-CH 600V 27A TO263
AOD4S60
MOSFET N-CH 600V 4A TO252
AOTF15S60L
MOSFET N-CH 600V 15A TO220-3F
