AOB15S60L
MOSFET N-CH 600V 15A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOB15S60L. This device features a 600 V drain-source voltage and a continuous drain current of 15 A at 25°C (Tc). The low on-resistance of 290 mOhm is specified at 7.5 A and 10 V gate drive. With a maximum power dissipation of 208 W (Tc), this MOSFET is designed for surface mounting in a TO-263-3, D2PAK package. Key parameters include a gate charge (Qg) of 15.6 nC at 10 V and input capacitance (Ciss) of 717 pF at 100 V. Suitable for applications in power supply, industrial, and automotive sectors requiring high voltage switching. Operating temperature range is -55°C to 150°C (TJ). Packaged in Tape & Reel (TR).
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 717 pF @ 100 V |