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AOB14N50

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AOB14N50

MOSFET N-CH 500V 14A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AOB14N50, an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 14A at 25°C. With a maximum power dissipation of 278W (Tc) and a low on-resistance (Rds On) of 380mOhm at 7A and 10V, it offers efficient power handling. The AOB14N50 utilizes Metal Oxide technology and is packaged in a surface-mount TO-263 (D2PAK) configuration, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 2297 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for power supply, lighting, and industrial motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)278W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2297 pF @ 25 V

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