AOB12N65L
MOSFET N-CH 650V 12A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOB12N65L is an N-Channel MOSFET designed for high-voltage applications. This discrete component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 12A at 25°C. With a maximum power dissipation of 278W (Tc), it is suitable for demanding power conversion and management tasks. The device offers a low Rds On of 720mOhm at 6A and 10V gate drive. Key parameters include a Ciss of 2150pF at 25V and a Qg of 48nC at 10V. The AOB12N65L is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management and PCB integration. Operating temperature range is -55°C to 150°C. This component is widely utilized in power supplies, lighting, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
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