AOB12N60FDL
MOSFET N-CH 600V 12A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOB12N60FDL is a 600V N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 12A at 25°C and a maximum power dissipation of 278W (Tc). The Rds(On) is specified at 650mOhm maximum at 6A and 10V drive voltage. Key parameters include a gate charge (Qg) of 50nC max at 10V and input capacitance (Ciss) of 2010pF max at 25V. The AOB12N60FDL is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding thermal management. This MOSFET is commonly utilized in industrial power supplies, lighting, and renewable energy systems where robust performance and efficient switching are critical. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 25 V |
Request a Quote
Clients Also Buy
AO4266
MOSFET N-CH 60V 10A 8SO
AONV070V65G1
GAN
AOL1432
MOSFET N-CH 25V 12A/44A ULTRASO8
