AOB11S65L
MOSFET N-CH 650V 11A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOB11S65L, is engineered for high-voltage applications. This TO-263 (D2PAK) surface-mount device features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 198W (Tc). The Rds On is specified at a maximum of 399mOhm at 5.5A and 10V gate drive. Key parameters include a typical gate charge (Qg) of 13.2 nC at 10V and input capacitance (Ciss) of 646 pF at 100V. The AOB11S65L operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power supply units, industrial motor control, and lighting applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V |
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