AOB11N60L
MOSFET N-CH 600V 11A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB11N60L is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C. The device offers a maximum on-resistance (Rds On) of 700mOhm at 5.5A and 10V, with a power dissipation of 272W (Tc). The AOB11N60L is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management. Key electrical parameters include a gate charge (Qg) of 37 nC at 10V and input capacitance (Ciss) of 1990 pF at 25V. This MOSFET is suitable for use in power supplies, industrial equipment, and lighting solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 272W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
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