AOB11C60L
MOSFET N-CH 600V 11A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB11C60L is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 11 A at 25°C (Tc). The On-Resistance (Rds On) is specified at a maximum of 400 mOhm at 5.5 A and 10 V gate drive. With a maximum power dissipation of 278 W (Tc), it is suitable for demanding thermal environments. The MOSFET utilizes a TO-263 (D2PAK) surface mount package, facilitating integration into compact PCB layouts. Key electrical parameters include a gate charge (Qg) of 42 nC at 10 V and input capacitance (Ciss) of 2000 pF at 100 V. Operating temperature ranges from -55°C to 150°C (TJ). This component is widely utilized in power supplies, server applications, and industrial power conversion systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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