AOB11C60
MOSFET N-CH 600V 11A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc.'s AOB11C60 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C. The device offers a low on-resistance (Rds On) of 440mOhm maximum at 5.5A and 10V gate drive. With a maximum power dissipation of 278W at the case temperature, the AOB11C60 is suitable for demanding power conversion tasks.
The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management and automated assembly. Key parameters include a gate charge (Qg) of 42 nC maximum at 10V and input capacitance (Ciss) of 2000 pF maximum at 100V. Operating over an extended temperature range of -55°C to 150°C (TJ), this component finds application in industrial power supplies, lighting, and motor control systems. The AOB11C60 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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