AOB1100L
MOSFET N-CH 100V 8A/130A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOB1100L, is a high-performance device designed for demanding applications. This MOSFET features a Drain-Source Voltage (Vdss) of 100V and a Continuous Drain Current (Id) of 8A at typical ambient temperature (Ta) or 130A at case temperature (Tc). The low on-resistance of 11.7mOhm at 20A and 10V gate drive makes it suitable for efficient power switching. With a maximum Gate Charge (Qg) of 100 nC at 10V and an Input Capacitance (Ciss) of 4833 pF at 25V, it offers optimized switching characteristics. The device boasts a substantial power dissipation capability of 2.1W (Ta) and 500W (Tc). Packaged in a TO-263-3, D2PAK surface-mount configuration, the AOB1100L is ideal for power management, automotive, and industrial control systems. It operates reliably across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 500W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4833 pF @ 25 V |
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