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AO6701

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AO6701

MOSFET P-CH 30V 2.3A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO6701 is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and can handle a Continuous Drain Current (Id) of 2.3A at 25°C, with a maximum power dissipation of 1.15W. The AO6701 exhibits a typical Rds On of 135mOhm at 2.3A and 10V Vgs, with a drive voltage range from 2.5V to 10V. It includes an integrated Schottky diode for enhanced performance. The gate charge (Qg) is 4.9 nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 409 pF maximum at 15V Vds. The MOSFET operates within a temperature range of -55°C to 150°C and is packaged in a 6-TSOP (SC-74, SOT-457) for surface mounting, supplied on tape and reel. This component is utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Rds On (Max) @ Id, Vgs135mOhm @ 2.3A, 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.15W (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds409 pF @ 15 V

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