AO6409A
MOSFET P-CH 20V 5.5A 6TSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO6409A is a P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C. The AO6409A offers a maximum on-resistance (Rds On) of 41mOhm at 5.5A and 4.5V Vgs, with a gate-source threshold voltage (Vgs(th)) of 900mV at 250µA. Its low gate charge (Qg) of 11nC at 4.5V Vgs and input capacitance (Ciss) of 905pF at 10V Vds contribute to efficient switching performance. The MOSFET operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.1W (Ta). The AO6409A is supplied in a 6-TSOP (SC-74, SOT-457) surface mount package, typically on tape and reel. This component is suitable for use in power management, consumer electronics, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 5.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 10 V |
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