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AO6409

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AO6409

MOSFET P-CH 20V 5.5A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO6409 is a P-Channel enhancement mode MOSFET designed for power management applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 5.5A at 25°C ambient. The low on-resistance, specified at a maximum of 45mOhm at 5A and 4.5Vgs, minimizes conduction losses. It supports gate drive voltages from 1.8V to 4.5V. The AO6409 is housed in a compact 6-TSOP (SC-74, SOT-457) surface mount package, facilitating high-density board designs. With a maximum power dissipation of 2.1W per the datasheet, it is suitable for use in consumer electronics, battery management systems, and general-purpose switching applications. The typical input capacitance (Ciss) is 1450pF at 10V, and the gate charge (Qg) is 17.2nC at 4.5V. It operates across a wide temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 5A, 4.5V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs17.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 10 V

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