AO6409
MOSFET P-CH 20V 5.5A 6TSOPManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO6409 is a P-Channel enhancement mode MOSFET designed for power management applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 5.5A at 25°C ambient. The low on-resistance, specified at a maximum of 45mOhm at 5A and 4.5Vgs, minimizes conduction losses. It supports gate drive voltages from 1.8V to 4.5V. The AO6409 is housed in a compact 6-TSOP (SC-74, SOT-457) surface mount package, facilitating high-density board designs. With a maximum power dissipation of 2.1W per the datasheet, it is suitable for use in consumer electronics, battery management systems, and general-purpose switching applications. The typical input capacitance (Ciss) is 1450pF at 10V, and the gate charge (Qg) is 17.2nC at 4.5V. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 10 V |
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