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AO6405

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AO6405

MOSFET P-CH 30V 5A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO6405 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C. The AO6405 exhibits a low on-resistance of 52mOhm maximum at 5A and 10V Vgs, contributing to reduced conduction losses. Key electrical parameters include a gate charge of 18nC maximum at 10V Vgs and an input capacitance of 840pF maximum at 15V Vds. The MOSFET is packaged in a compact 6-TSOP (SC-74, SOT-457) for surface mounting and supports a maximum power dissipation of 2W. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in power management circuits, battery charging systems, and general-purpose switching applications within the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs52mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 15 V

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