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AO6402AL

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AO6402AL

MOSFET N-CH 30V 7A 6TSOP

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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The Alpha & Omega Semiconductor Inc. AO6402AL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 7A at 25°C. The AO6402AL offers a low on-resistance (Rds On) of 27mOhm at 7A and 10V Vgs, contributing to reduced conduction losses. Its typical applications span industrial power supplies, battery management systems, and consumer electronics. The device is supplied in a compact 6-TSOP (SC-74, SOT-457) package suitable for surface mounting, with a maximum power dissipation of 2W. Gate drive requirements are compatible with standard logic levels, with a threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-source voltage tolerance of ±20V. Input capacitance (Ciss) is rated at 820pF maximum at 15V Vds, and gate charge (Qg) is 17nC maximum at 10V Vgs. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs27mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 15 V

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