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AO5404EL

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AO5404EL

MOSFET N-CH 20V 500MA SC89-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO5404EL is an N-Channel Power MOSFET in an SC-89-3 package, designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 500mA at 25°C ambient. The AO5404EL offers a low On-Resistance (Rds On) of 550mOhm maximum at 500mA and 4.5V Vgs. It supports gate drive voltages from 1.8V to 4.5V for Rds On specifications and has a maximum gate-source voltage of ±8V. With a maximum power dissipation of 280mW at 25°C ambient and a junction temperature range of -55°C to 150°C, this MOSFET is suitable for use in portable electronics and power management circuits. Key electrical parameters include a maximum input capacitance (Ciss) of 45pF at 10V Vds and a typical gate charge (Qg) of 1nC at 4.5V Vgs. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs550mOhm @ 500mA, 4.5V
FET Feature-
Power Dissipation (Max)280mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSC-89-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds45 pF @ 10 V

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