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AO4771L

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AO4771L

MOSFET P-CH 30V 4A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4771L is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) capability of 4A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 68mOhm maximum at 4A and 10V Vgs, with a threshold voltage (Vgs(th)) of 2.3V maximum at 250µA. Key characteristics include an input capacitance (Ciss) of 350pF maximum at 15V Vds and a gate charge (Qg) of 7nC maximum at 10V Vgs. The AO4771L is packaged in an 8-SOIC (0.154", 3.90mm Width) and supports surface mounting. It includes an integrated Schottky Diode, enhancing its performance in switching applications. Operating temperature ranges from -55°C to 150°C (TJ), with a maximum power dissipation of 2W (Ta). This MOSFET is suitable for use in power management and switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs68mOhm @ 4A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 15 V

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