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AO4771

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AO4771

MOSFET P-CH 30V 4A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4771 is a P-Channel MOSFET designed for power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4A at 25°C. The AO4771 exhibits a maximum on-resistance (Rds On) of 68mOhm at 4A and 10V Vgs. It is packaged in an 8-SOIC format and supports surface mounting. Key electrical characteristics include a gate charge (Qg) of 7nC at 10V Vgs and input capacitance (Ciss) of 350pF at 15V Vds. The component also incorporates an isolated Schottky Diode. This MOSFET is suitable for use in various power management circuits across industries such as industrial automation and consumer electronics. It operates within an ambient temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs68mOhm @ 4A, 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 15 V

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