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AO4566

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AO4566

MOSFET N-CH 30V 12A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4566 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C, with a maximum power dissipation of 2.5W. The AO4566 exhibits a low on-resistance (Rds On) of 11mOhm at 12A and 10V, supported by a gate drive range of 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 12.2 nC at 10V and an input capacitance (Ciss) of 542 pF at 15V. The MOSFET operates within an extended temperature range of -55°C to 150°C and is housed in an 8-SOIC package suitable for surface mounting. This component is widely utilized in automotive, industrial, and consumer electronics sectors requiring robust power management solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds542 pF @ 15 V

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