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AO4498E

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AO4498E

MOSFET N-CH 30V 18A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4498E is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4498E offers a low on-resistance (Rds On) of 5.8mOhm at 10V gate-source voltage and 18A drain current. It is supplied in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a maximum gate charge (Qg) of 50 nC at 10V and an input capacitance (Ciss) of 2760 pF at 15V. This component is utilized in various industries including automotive, industrial, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs5.8mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 15 V

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