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AO4496

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AO4496

MOSFET N CH 30V 10A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4496 is an N-Channel MOSFET designed for power management applications. This component offers a 30 V drain-to-source voltage and a continuous drain current capability of 10 A at 25°C ambient temperature, with a maximum power dissipation of 3.1 W. The device features a low on-resistance (Rds On) of 19.5 mOhm at 10 A and 10 Vgs, achieved with a 4.5V to 10V gate drive range. Key electrical parameters include a typical gate charge of 13 nC at 10 Vgs and an input capacitance (Ciss) of 715 pF at 15 Vds. The AO4496 utilizes advanced MOSFET technology and is housed in an 8-SOIC package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C. This component finds application in various industrial and consumer electronics sectors requiring efficient power switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs19.5mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds715 pF @ 15 V

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