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AO4492

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AO4492

MOSFET N CH 30V 14A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4492 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 14A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4492 offers a low on-resistance (Rds On) of 9.5mOhm at 14A and 10V Vgs, facilitating minimal conduction losses. Key electrical characteristics include a gate charge (Qg) of 18nC at 10V Vgs and an input capacitance (Ciss) of 770pF at 15V Vds. The device operates with drive voltages ranging from 4.5V to 10V and has a gate-source voltage (Vgs) limit of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA. Housed in an 8-SOIC package, the AO4492 is suitable for surface mounting and operates across an industrial temperature range of -55°C to 150°C. This MOSFET technology is commonly utilized in power management, computing, and industrial automation sectors. The AO4492 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 15 V

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