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AO4488

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AO4488

MOSFET N-CH 30V 15A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4488 is an N-Channel power MOSFET designed for efficient switching applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 15A at 25°C ambient temperature, with a maximum power dissipation of 1.7W. The AO4488 exhibits a low on-resistance of 4.6mOhm at 20A and 10V Vgs, achieved with drive voltages ranging from 4.5V to 10V. Key electrical parameters include a gate charge (Qg) of 112 nC at 10V and input capacitance (Ciss) of 6800 pF at 15V. The AO4488 is housed in a standard 8-SOIC surface-mount package, measuring 3.90mm in width, and is supplied on tape and reel. Its operating temperature range is -55°C to 150°C. This device is suitable for use in various industrial applications requiring robust power switching capabilities.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6800 pF @ 15 V

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